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| June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -30 A, -30 V. RDS(ON) = 0.042 @ VGS= -4.5 V RDS(ON) = 0.025 @ VGS= -10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175C maximum junction temperature rating. ________________________________________________________________________________ S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage T C = 25C unless otherwise noted NDP6030PL -30 16 -30 -90 75 0.5 -65 to 175 275 -65 to 175 NDB6030PL Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C W TJ,TSTG TL TJ,TSTG RJC RJA Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Operating and Storage Temperature Range C C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.5 C/W C/W NDP6030PL Rev.B1 (c) 1997 Fairchild Semiconductor Corporation Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25 C VDS = -24 V, VGS = 0 V TJ = 125C IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note) o -30 -36 -250 1 -100 -100 V mV/oC A mA nA nA mV/oC -2 -1.6 0.042 0.075 0.025 A 20 S V BVDSS/TJ IDSS VGS = 16 V, VDS = 0 V VGS = -16 V, VDS = 0 V ID = -250 A, Referenced to 25 o C VDS = VGS, ID= -250 A TJ = 125C VGS = -4.5 V, ID = -15 A TJ = 125C VGS = -10 V, ID = -19 A -1 -0.8 2.2 -1.4 -1.08 0.037 0.053 0.021 -20 ON CHARACTERISTICS VGS(th)/TJ VGS(th) RDS(ON) Gate Threshold Voltage Temp.Coefficient Gate Threshold Voltage Static Drain-Source On-Resistance ID(on) gFS On-State Drain Current Forward Transconductance VGS = -4.5 V, VDS = -5 V VDS = -4.5 V, ID = -19 A VDS = -15 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS ISM VSD trr Irr Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note) 1570 975 360 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -15 V, ID = -5 A, VGS = -5 V, RGEN = 6 12.5 60 50 52 25 120 100 100 36 nS nS nS nS nC nC nC VDS= -12 V ID = -30 A , VGS = -5 V 26 6.5 11.5 DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = -15 A VGS = 0 V, IF = -30 A dIF/dt = 100 A/s (Note) -30 -100 -0.92 58 -1.5 -1.3 A A V ns A Note: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. NDP6030PL Rev.B1 Typical Electrical Characteristics -I D , DRAIN-SOURCE CURRENT (A) 60 DRAIN-SOURCE ON-RESISTANCE V GS = -10V -7.0 1.6 R DS(ON) , NORMALIZED -6.0 -5.0 -4.5 -4.0 -3.5 -3.0 1.4 1.2 1 0.8 0.6 0.4 V GS= -3.5 V -4.0 -4.5 -5.0 -5.5 -6.0 -7.0 -10 40 20 0 0 1 2 3 4 5 0 10 20 30 40 50 60 -VDS , DRAIN-SOURCE VOLTAGE (V) -I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. DRAIN-SOURCE ON-RESISTANCE (OHMS) 1.8 0.12 I D = -15A R DS(ON) , ON-RESISTANCE T = 25C A ID = -15A 125 C 1.6 1.4 1.2 1 0.8 0.6 -50 V GS = -4.5V 0.1 0.08 0.06 0.04 0.02 0 R DS(ON), NORMALIZED -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (C) J 150 175 2 4 6 8 10 -VGS ,GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. -IS , REVERSE DRAIN CURRENT (A) 30 60 10 1 0.1 0.01 VDS = -5V -ID , DRAIN CURRENT (A) 25 20 15 10 5 0 1 -V 2 GS T = -55C A VGS = 0V TJ = 125C 25C -55C 25C 125C 3 4 5 0.0001 0.2 0.4 -V SD 0.6 0.8 1 1.2 1.4 , GATE TO SOURCE VOLTAGE (V) , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDP6030PL Rev.B1 Typical Electrical Characteristics (continued) 10 -V GS , GATE-SOURCE VOLTAGE (V) 5000 I D = -30A CAPACITANCE (pF) 8 VDS = -6V -12V -24V 3000 2000 C iss 1000 6 Coss 4 500 300 2 150 0.1 f = 1 MHz VGS = 0 V 0.3 1 2 5 10 C rss 0 20 30 0 10 20 30 40 50 -VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8.Capacitance Characteristics. 150 100 -ID , DRAIN CURRENT (A) 50 30 N) S(O RD IT LIM 10 s 10 0 s POWER (W) 7000 6000 5000 4000 3000 2000 1000 0 0.001 1m s 10m s 100 ms DC SINGLE PULSE R JC =2 C/W TC = 25C 10 5 2 1 1 VGS = -4.5V SINGLE PULSE R JC = 2.0 C/W TC = 25C 2 5 10 20 30 50 0.01 0.1 1 10 100 1,000 - V DS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (mS) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. TRANSIENT THERMAL RESISTANCE 1 0.5 0.3 0.2 0.1 D = 0.5 r(t), NORMALIZED EFFECTIVE 0.2 R JC (t) = r(t) * RJC R JC = 2.0 C/W P(pk) 0.1 0.05 0.05 0.03 0.02 0.02 0.01 Single Pulse t1 t2 TJ - TC = P * RJC (t) Duty Cycle, D = t1 /t2 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000 0.01 0.01 0.05 Figure 11. Transient Thermal Response Curve. NDP6030PL Rev.B1 |
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